规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.6 A, 200 V, 0.1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -3.1A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 20 W, -8 A, 60 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK, 整卷
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 12A, D-PAK
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 12A, TO-252, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 100V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)ON SEMICONDUCTOR
达林顿晶体管, NPN, 100V, D-PAK, 整卷
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 20 W, 8 A, 1000 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 60 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, -100 V, 4 MHz, 20 W, -8 A, 2500 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 20 W, 8 A, 300 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 引脚
(EN)
