规格：晶体管封装类型 TO-252,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 100V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 16A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 18A, D-PAK
(EN)
INFINEON
场效应管, MOSFET, N沟道, 65A, 30V, 75W
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 600V, 9.3OHM, 1A, TO-252-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 45 V, 0.02 ohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -100 V, 3 MHz, 15 W, -3 A, 10 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
BIPOLAR TRANSISTOR, NPN, 100V, 3A, TO-252
(EN)
