规格：晶体管封装类型 TO-252,
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0037 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 40 V, 0.0043 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 163 A, 40 V, 0.0017 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0029 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 49 A, 60 V, 0.0074 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 38 A, 60 V, 0.0137 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.0228 ohm, 10 V, 2.1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 30 V, 15 W, -10 A, 200 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0178 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)
LITTELFUSE
IGBT Single Transistor, 20 A, 125 W, 440 V, TO-252, 3 Pins
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -60 V, 0.15 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 42 A, 30 V, 3200 μohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 200V, 0.6OHM, 4.5A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 15 mohm, 10 V, 2 V
(EN)
