规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17.5 A, 40 V, 0.004 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17.5 A, 40 V, 0.004 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 7 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.6 A, 1 kV, 7.1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -100V, 0.82OHM, -3.6A, TO-252-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0021 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0021 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0028 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, AEC-Q101, P沟道, -70 A, -30 V, 0.0035 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0035 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0035 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 6.3 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V
(EN)
