规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -35V, -13A
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 9.3 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 50 V, 0.009 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, 高电压, NPN, 600V, DPAK
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0034 ohm, 10 V, 1.8 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 25A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
(EN)ON SEMICONDUCTOR
达林顿晶体管, PNP, -100V, D-PAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.32 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
