规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 40 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET, N CHANNEL, 40V, 0.0057OHM, 69A,
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 51 A, 40 V, 0.0076 ohm, 10 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.047 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.073 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 75A, D-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 60 V, 47 mohm, 5 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 600 V, 2.7 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -30 A, -60 V, 0.069 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 15 A, 60 V, 0.037 ohm, 10 V, 2 V
(EN)
