规格：晶体管封装类型 TO-252,
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.024 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 150 V, 0.038 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.008 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 60 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.02 ohm, 4.5 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.022 ohm, 2.5 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
