规格：晶体管封装类型 TO-252,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 100 V, 220 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
IGBT, 1.3V, 10A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -15 A, -30 V, 0.01 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 96 A, 60 V, 0.0061 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0074 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60A, -40V, 3W
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -80 V, 0.021 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 150 MHz, 3 W, 3 A, 500 hFE
(EN)
