规格：晶体管封装类型 DIP,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
芯片
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, DIP
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 100 V, 270 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管阵列
(EN)
STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 100 V, 500 mA, DIP
ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP
(EN)
