规格：晶体管封装类型 DIP,
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
VISHAY
晶体管, MOSFET, P沟道, 700 mA, -100 V, 1.2 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, NPN, 40 V, 20 mA, 100 hFE, DIP
(EN)
POWEREX
晶体管, IGBT模块, 600V, 50A, DIP
(EN)THAT CORPORATION
双极晶体管阵列, NPN, PNP, 40 V, 20 mA, 100 hFE, DIP
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, PNP, -40 V, -20 mA, 75 hFE, DIP
(EN)
VISHAY
场效应管, MOSFET, N沟道, HEXDIP
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, DIP
(EN)
TEXAS INSTRUMENTS
芯片, 达林顿晶体管阵列, 500mA x8
(EN)
