规格：晶体管封装类型 SOT-23,
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 100 MHz, 225 mW, 500 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, -350V, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -35 V, 2 mA, -3 V, SOT-23, JFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -2.7A
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 310 mW, 500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, JFET, N沟道, -30V, SOT-23
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 185mA, TO-236
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 490 mW, 2 A, 40 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 210 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 300 MHz, 300 mW, 100 mA, 600 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.14 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双极晶体管
(EN)
