规格：晶体管封装类型 SOT-23,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, 30V, SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 350 V, 50 MHz, 300 mW, 500 mA, 30 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 85 MHz, 250 mW, -100 mA, 30 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 300 V, 250 mW, 100 mA, 40 hFE
(EN)
VISHAY
场效应管, MOSFET, P沟道, -80V, 2.2A TO-236
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 710 mW, -2 A, 150 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 40 MHz, 1.5 W, 500 mA, 180 hFE
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
VISHAY
晶体管, N通道
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 32 V, 300 mW, 100 mA, 420 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 140 V, 300 MHz, 250 mW, 300 mA, 60 hFE
(EN)ON SEMICONDUCTOR
晶体管, PNP, 45V, SOT-23
(EN)
ON SEMICONDUCTOR
双极性晶体管
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 300 mW, 200 mA, 120 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)
