VISHAY

晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V

NEXPERIA

单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23

ON SEMICONDUCTOR

双极晶体管

DIODES INC.

单晶体管 双极, PNP, -45 V, 310 mW, -500 mA, 400 hFE

ON SEMICONDUCTOR

晶体管, JFET, JFET, -25 V, 12 mA, 30 mA, -4 V, SOT-23, JFET

NEXPERIA

单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 300 V, 100 MHz, 250 mW, 50 mA, 50 hFE

NEXPERIA

晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV

ON SEMICONDUCTOR

BJT, NPN, 80V SOT-23

ON SEMICONDUCTOR

单晶体管 双极, PNP, 45 V, 300 mW, 500 mA, 100 hFE

NEXPERIA

单晶体管 双极, NPN, 300 V, 50 MHz, 250 mW, 100 mA, 40 hFE

VISHAY

晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 230 MHz, 300 mW, 2 A, 470 hFE

MULTICOMP

单晶体管 双极, NPN, 45 V, 170 MHz, 330 mW, 800 mA, 630 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 220 hFE

DIODES INC.

单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 110 MHz, 710 mW, 2 A, 40 hFE

ON SEMICONDUCTOR

单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -100 mA, 150 hFE

VISHAY

场效应管, MOSFET, P沟道, -20V, 4.7A TO-236

DIODES INC.

单晶体管 双极, NPN, 400 V, 50 MHz, 500 mW, 225 mA, 100 hFE

MULTICOMP

场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23

DIODES INC.

单晶体管 双极, PNP, 400 V, 50 MHz, 500 mW, -150 mA, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV

DIODES INC.

单晶体管 双极, 高增益, PNP, 20 V, 290 MHz, 350 mW, 4 A, 450 hFE