规格：晶体管封装类型 SOT-23,
DIODES INC.
单晶体管 双极, PNP, 100 V, 200 MHz, 1.25 W, 2 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, -2 mA, -15 mA, 2 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)NEXPERIA
单晶体管 双极, PNP, 40 V, 250 mW, 1 A, 300 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 20 V, 180 MHz, 625 mW, -1.5 A, 475 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -500 V, 500 mW, -500 mA, 10 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)DIODES INC.
单晶体管 双极, NPN, 65 V, 300 MHz, 300 mW, 100 mA, 180 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 250 hFE
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -30 V, 250 mW, -500 mA, 4000 hFE, SOT-23
(EN)NEXPERIA
单晶体管 双极, NPN, 30 V, 250 MHz, 250 mW, 600 mA, 100 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 150 MHz, 310 mW, -100 mA, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
(EN)DIODES INC.
单晶体管 双极, NPN, 20 V, 140 MHz, 625 mW, 2.5 A, 450 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, PNP, -12V
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 150 MHz, 500 mW, -1 A, 300 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, JFET, N沟道, -40V, SOT-23
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 250 mW, 1 A, 300 hFE
(EN)
