规格：晶体管封装类型 SOT-23,
NXP
射频场效应管, JFET, N沟道, 20V, 25mA, 3-SOT-23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1 V
(EN)
ROHM
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 150 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -340 mA, -60 V, 1.2 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 350 mW, 100 mA, 20 hFE
(EN)MULTICOMP
单晶体管 双极, NPN, 45 V, 170 MHz, 300 mW, 500 mA, 160 hFE
(EN)INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
DIODES INC.
晶体管, MOSFET, P沟道, 75 mA, -100 V, 20 ohm, -10 V, -3.5 V
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 220 MHz, 270 mW, 1 A, 400 hFE
(EN)DIODES INC.
单晶体管 双极, 达林顿, PNP, 100 V, 140 MHz, 625 mW, 800 mA, 60000 hFE
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
(EN)DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V
(EN)NEXPERIA
单晶体管 双极, PNP, 100 V, 300 mW, 1 A, 150 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, PNP, 40VDC, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
射频场效应管, JFET
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 300 MHz, 310 mW, 100 mA, 110 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)MULTICOMP
单晶体管 双极, NPN, 45 V, 250 mW, 100 mA, 90 hFE
(EN)ON SEMICONDUCTOR
双极性晶体管
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
