规格：晶体管封装类型 SOT-23,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N沟道
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 30VDC, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 40 V, 700 mW, 200 mA, 40 hFE, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 40 V, 350 mW, 1.2 A, 10000 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -80 V, 50 MHz, 300 mW, -500 mA, 100 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 100 MHz, 540 mW, 2 A, 100 hFE
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 40 V, 380 MHz, 250 mW, 25 mA, 67 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)DIODES INC.
单晶体管 双极, PNP, 60 V, 150 MHz, 500 mW, -1 A, 100 hFE
(EN)MULTICOMP
单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.024 ohm, 4.5 V, 600 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)DIODES INC.
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 100 MHz, 310 mW, -800 mA, 170 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 100 MHz, 250 mW, 100 mA, 520 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, -60 V, 200 MHz, 300 mW, -600 mA, 100 hFE
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, 32 V, 250 mW, 100 mA, 150 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -30 V, 160 MHz, 390 mW, -2.4 A, 320 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)DIODES INC.
单晶体管 双极, PNP, 60 V, 250 MHz, 1.25 W, 3 A, 200 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 15 V, 120 MHz, 625 mW, 3 A, 450 hFE
(EN)
