规格：晶体管封装类型 SOT-23,
NEXPERIA
单晶体管 双极, NPN, 60 V, 175 MHz, 390 mW, 3.8 A, 500 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 75 MHz, 500 mW, -2 A, 40 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
(EN)NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 300 mW, -1 A, 220 hFE
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)DIODES INC.
单晶体管 双极, NPN, 20 V, 215 MHz, 1.25 W, 4.5 A, 450 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 290 hFE
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 250 mW, 500 mA, 100 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 50 V, 115 MHz, 1.1 W, 4 A, 450 hFE
(EN)DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)
ROHM
单晶体管 双极, NPN, 45 V, 200 MHz, 200 mW, 10 mA, 200 hFE
