规格：晶体管封装类型 SOT-23,
INFINEON
晶体管, MOSFET, N沟道, 40 mA, 250 V, 30 ohm, 10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 95 MHz, 225 mW, -100 mA, 30 hFE
(EN)
INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
INFINEON
晶体管, MOSFET, P沟道, -330 mA, -60 V, 1.4 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
NEXPERIA
场效应管, P通道, DMOS FET, -50V, -130MA, 3-SOT
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, -5 V, -800 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)NEXPERIA
单晶体管 双极, 开关, NPN, 12 V, 500 MHz, 250 mW, 100 mA, 40 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 12 V, 400 MHz, 225 mW, 200 mA, 25 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 12 V, 400 MHz, 225 mW, 100 mA, 25 hFE
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)
