规格：晶体管封装类型 SOT-23,
RENESAS
晶体管, MOSFET, N沟道, 3.7 A, 30 V, 0.042 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.212 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 400 mA, 200 V, 5 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 400 mA, 250 V, 4 ohm, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -3.1A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.6 A, 20 V, 0.056 ohm, 4.5 V, 650 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.49 A, -30 V, 0.15 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -30 V, 0.158 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.032 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -530 mA, -150 V, 1 ohm, -10 V, -4.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -380 mA, -200 V, 1.96 ohm, -6 V, -4.5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -200V, 490mA, TO-236
(EN)
