规格：晶体管封装类型 SOT-23,
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 75 mA, -100 V, 20 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)
