规格：晶体管封装类型 SOIC,
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 100 V, 500 mA, SOIC
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 11.1 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 350 mA, SOIC
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 25A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, 15 A, -20 V, 8.2 mohm, 4.5 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双P沟道, 2W, 8-SOIC
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
