规格：晶体管封装类型 SOIC,
VISHAY
MOSFET, N CH, 20V, 19.8A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 34A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0082OHM, 9A, SOIC-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
(EN)INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
(EN)INFINEON
场效应管, MOSFET, P沟道, 10A
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 100 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.7 A, -20 V, 40 mohm, -4.5 V, 700 mV
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0137 ohm, 10 V, 1.8 V
(EN)
