规格：晶体管封装类型 SOIC,
VISHAY
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR
达林顿晶体管阵列, NPN, 7, 50V, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.014 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9.3 A, 30 V, 14 mohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V
(EN)INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -12 V, 0.017 ohm, -4.5 V, -0.9 V
(EN)INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 17.2A, 30V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, P沟道
(EN)
