规格：晶体管封装类型 SOIC,
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5 A, 40 V, 0.048 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150V, 4.1A, SOIC
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -20 V, 250 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0132Ω, 9A, SOIC-8
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
双极晶体管阵列, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 通用, NPN, PNP, 30 V, 1.6 W, 3 A, 100 hFE, SOIC
(EN)VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷
(EN)
