规格：晶体管封装类型 SOIC,
VISHAY
晶体管, MOSFET, P沟道, -10.8 A, -30 V, 0.02 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 20.7 A, 40 V, 0.0075 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)ANALOG DEVICES
双极晶体管阵列, PNP, 36 V, 20 mA, 165 hFE, SOIC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.008 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 2.5 A, 20 V, 30 mohm, 4.5 V, 2.7 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 2.5 A, 20 V, 30 mohm, 4.5 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, 1.17 A, -15 V, 0.18 ohm, -10 V, -1.25 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)STMICROELECTRONICS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
