规格：晶体管封装类型 SOIC,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.0033 ohm, 10 V, 1.9 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 0.01 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0265OHM, 6.1A,
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 14A, SOIC-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -2.2A, -150V, 8-SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 4.8A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管阵列
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -30 V, 14 mohm, -10 V, -3 V
(EN)DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
