规格：晶体管封装类型 TO-220AB,
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 100V, TO-220
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 60 V, 50 W, 2 A, 500 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 65 W, -5 A, 1000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0079 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 100 mohm, 10 V, 4.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 40V, 190A, TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 42.6 A, 200 V, 55 mohm, 10 V, 5.5 V
(EN)
INFINEON
单晶体管, IGBT, 31 A, 600 V, 139 W, 600 V, TO-220AB, 3 引脚
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 10A
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 6.2 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 55A, TO-220AB
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 55 V, 60 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 200 V, 0.0138 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 60 V, 12 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 34A
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 30A, TO-220AB
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB
(EN)
