规格：晶体管封装类型 TO-220AB,
VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 250 V, 33 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.35 V, 215 W, 600 V, TO-220AB, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220AB-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 65 W, 6 A, 15 hFE
(EN)INFINEON
单晶体管, IGBT, N通道, 28 A, 2.88 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 130A, TO-220AB
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 77 A, 55 V, 10 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.003 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
