规格：晶体管封装类型 TO-220AB,
INFINEON
单晶体管, IGBT, 13 A, 2.4 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2200 μohm, 5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.002 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)INFINEON
单晶体管, IGBT, 28 A, 2.21 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.1 A, 250 V, 0.45 ohm, 10 V, 4 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0078 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 12A, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 53A TO-220AB
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 10 MHz, 40 W, 1 A, 10 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 85 A, 30 V, 0.003 ohm, 10 V, 1 V
(EN)INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-220AB, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.008 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.00197 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)
