规格：晶体管封装类型 TO-220AB,
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 55A TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
达林顿双极晶体管
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10 V, 5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 195 A, 40 V, 1.75 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 80 V, 10 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 450 V, 13 MHz, 360 mW, 8 A, 5 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, PNP, -100 V, 65 W, -5 A, 1000 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 173 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 20 V, 4 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, TO-220
(EN)
