规格：晶体管封装类型 TO-220AB,
INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0093 ohm, 20 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 车用, 75V, 75A, TO-220AB
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 84A TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 200 V, 40 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 5.8 mohm, 10 V, 4 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V
(EN)MULTICOMP
单晶体管 双极, NPN, 70 V, 4 MHz, 40 W, 7 A, 150 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 250 V, 10 MHz, 40 W, 1 A, 10 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 76 A, 200 V, 17 mohm, 20 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, HEXFET, P沟道, -18 A, -50 V, 0.093 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 104 A, 55 V, 8 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.8 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 250 V, 0.038 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 2 mohm, 10 V, 2.3 V
(EN)
