规格：晶体管封装类型 TO-220AB,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
DIODES INC.
功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 5.5 ohm, 10 V, 4 V
(EN)DIODES INC.
功率场效应管, MOSFET, N沟道, 2.5 A, 950 V, 5.5 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.36 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 75A, TO-220AB
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 30 V, 2.8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 4.6 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 13 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)
