规格：晶体管封装类型 TO-220AB,
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 19A, TO-220AB
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 引脚
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 4850 μohm, 5 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 23A
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 90 W, 15 A, 50 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 2 W, 6 A, 3 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 65 W, -5 A, 1000 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 280 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 83 W, 15 A, 35 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
