规格：晶体管封装类型 TO-220AB,
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 5 MHz, 40 W, 15 A, 5 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 56 A, 100 V, 21 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 150 mohm, -10 V, -5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 60 V, 27 mohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -80 A, -55 V, 18 mohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, -23A, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 55 A, 60 V, 16.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
达林顿晶体管, NPN, 100V, TO-220
(EN)INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 430V, 20A
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
