规格：晶体管封装类型 TO-220AB,
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 64A TO-220AB
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.8 A, -100 V, 480 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 150 V, 70 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.21 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)INFINEON
单晶体管, IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 10 MHz, 40 W, 1 A, 10 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 90 W, 15 A, 40 hFE
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 3 MHz, 30 W, 1 A, 15 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.042 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 14.5A, TO220AB-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 10 A, 500 hFE
(EN)INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 14A, TO-220AB
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 50 W, 2 A, 500 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, PNP, -100 V, 3 MHz, 40 W, -3 A, 10 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
