规格：晶体管封装类型 TO-220AB,
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-220AB-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, TO-220, 18A, 200V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 41 mohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 50 W, 2 A, 500 hFE
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-220AB
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 83 W, -15 A, 35 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 80 V, 50 W, 2 A, 500 hFE, TO-220AB
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.031 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.1 ohm, 5 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 75 V, 3.3 mohm, 10 V, 4 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
