规格：晶体管封装类型 TO-220AB,
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 引脚
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 80 V, 13.7 mohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 2.27 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 65 W, 5 A, 1000 hFE
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 156 A, 30 V, 0.0034 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 19A, TO-220
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 79 A, 150 V, 0.014 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 60 V, 100 mohm, 5 V, 2 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 18A TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43.5 A, 100 V, 0.03 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)
