规格：晶体管封装类型 TO-220AB,
INFINEON
晶体管, MOSFET, N沟道, 46 A, 55 V, 0.0165 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 34 A, 1.6 V, 100 W, 600 V, TO-220AB, 3 引脚
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 31A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 9.3A, TO-220AB
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.31 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 23 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 4.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 10 A, 600 V, 83 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.5 A, 400 V, 0.43 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 13 A, 2.4 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 12 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 26 A, 200 V, 0.021 ohm, 10 V, 5 V
(EN)
