规格：晶体管极性 N沟道,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.245 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V
(EN)
