规格：晶体管极性 N沟道,
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 130 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0036 ohm, 10 V, 2.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 4.7 A, 900 V, 2.5 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.01917 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 42A, D-PAKS
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 12 V, 8.5 mohm, 4.5 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 400 V, 0.15 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 58 A, 650 V, 0.037 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0015 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)
