规格：晶体管极性 N沟道,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 7.7A, IPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 173 A, 60 V, 0.00275 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0035 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 75 V, 12.5 mohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, TO-220
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 6.5 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 250 V, 0.019 ohm, 10 V, 3 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 23 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
