规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 20 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 200 V, 0.054 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0052 ohm, 10 V, 2.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)
