VISHAY

晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220

VISHAY

场效应管, MOSFET, N沟道

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V

VISHAY

场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK

INFINEON

功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V

ROHM

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

ROHM

功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 20V, 50A, SOIC

INFINEON

晶体管, MOSFET, N沟道, 56 A, 250 V, 0.0145 ohm, 10 V, 5 V