规格：晶体管极性 N沟道,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V
(EN)
VISHAY
晶体管, IGBT, 200A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 75 V, 9.3 mohm, 10 V, 2.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.074 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.00245 ohm, 10 V, 1.78 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.6 V, 500 W, 600 V, ISOTOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.005 ohm, 10 V, 1 V
(EN)
