ROHM

晶体管, MOSFET, N沟道, 1.6 A, 45 V, 0.14 ohm, 4.5 V, 1.5 V

ROHM

晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V

VISHAY

晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.216 ohm, 4.5 V, 1.3 V

VISHAY

场效应管, MOSFET, N沟道

INFINEON

功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V

INFINEON

晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 9 A, 1.5 kV, 2.2 ohm, 10 V, 4 V

STMICROELECTRONICS

MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V

INFINEON

晶体管, MOSFET, N沟道, 78 A, 150 V, 12 mohm, 10 V, 5 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3

INFINEON

晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 35 A, 20 V, 4 mohm, 10 V, 1.2 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 1.5 A, 500 V, 2.3 ohm, 10 V, 3.75 V

VISHAY

绝缘金属物质功率模块

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 37 A, 600 V, 30 mohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

INFINEON

功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V