规格：晶体管极性 N沟道,
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 1 kV, 390 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.108 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 950 mohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3
(EN)
VISHAY
场效应管, N通道, MOSFET, 900V, 4.7A TO-247
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 16A, SOIC
(EN)
