规格：晶体管极性 N沟道,
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.3 ohm, 30 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
VISHAY
绝缘金属物质功率模块
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 53 A, 500 V, 80 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 4.4 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)
