规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 500 V, 0.039 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 200 V, 68 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 200 A, 100 V, 7.5 mohm, 15 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
(EN)
