规格：晶体管极性 N沟道,
NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.006 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 4.2 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 100 A, 500 V, 0.049 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 900 V, 900 mohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 300 V, 0.019 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 32.4 A, 650 V, 0.09 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 31.6 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 87 A, 650 V, 0.025 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 0.0054 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.0019 ohm, 10 V, 1 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 22 A, 1.55 V, 81 W, 600 V, Module
(EN)
