规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 28 A, 1.85 V, 130 W, 1.2 kV, Module
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.29 ohm, 8 V, 2.1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 65 A, 1.85 V, 225 W, 1.2 kV, Module
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 600 V, 130 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 200 A, 2.3 V, 735 W, 1.2 kV, Module
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 39 A, 1.85 V, 175 W, 1.2 kV, Module
(EN)INFINEON
晶体管, MOSFET, N沟道, 338 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 200 V, 150 mohm, 10 V, 3 V
(EN)
